Title :
IVA-3 GaAs/AlGaAs heterojunction emitter-down bipolar circuits fabricated on GaAs-on-Si substrates
Author :
Tran, Linh T. ; Matyi, Richard J. ; Shichijo, H. ; Lee, Jae W.
fDate :
11/1/1987 12:00:00 AM
Keywords :
Bipolar transistors; Circuits; Delay; Electron devices; Gallium arsenide; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Read only memory; Ring oscillators; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23279
