Title :
IVA-4 dramatic enhancement in the gain of AlGaAs/GaAs heterostructure bipolar transistors by surface passivation
Author :
Nottenburg, R.N. ; Sandroff, C.J. ; Skromme, B.J. ; Bischoff, J.C. ; Bhat, Ritesh
fDate :
11/1/1987 12:00:00 AM
Keywords :
Bipolar transistors; Current density; Gallium arsenide; Heterojunction bipolar transistors; Millimeter wave technology; Millimeter wave transistors; Passivation; Performance gain; Rapid thermal processing; Zinc;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23280
