DocumentCode
1118857
Title
IVA-6 a novel AlGaAs/GaAs HBT structure for near-ballistic collection
Author
Ishibashi, Takayuki ; Yamauchi, Yuji
Volume
34
Issue
11
fYear
1987
fDate
11/1/1987 12:00:00 AM
Firstpage
2371
Lastpage
2371
Keywords
Capacitance measurement; Capacitance-voltage characteristics; Electrons; Frequency measurement; Gallium arsenide; Heterojunction bipolar transistors; Laboratories; Microwave measurements; P-n junctions; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1987.23283
Filename
1486994
Link To Document