Title :
IVA-6 a novel AlGaAs/GaAs HBT structure for near-ballistic collection
Author :
Ishibashi, Takayuki ; Yamauchi, Yuji
fDate :
11/1/1987 12:00:00 AM
Keywords :
Capacitance measurement; Capacitance-voltage characteristics; Electrons; Frequency measurement; Gallium arsenide; Heterojunction bipolar transistors; Laboratories; Microwave measurements; P-n junctions; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23283
