Title :
High-performance, graded AlGaAs injector, GaAs Gunn diodes at 94 GHz
Author :
Couch, N.R. ; Spooner, H. ; Beton, P.H. ; Kelly, M.J. ; Lee, M.E. ; Rees, P.K. ; Kerr, T.M.
Author_Institution :
GEC Hirst Res. Centre, Wembley, UK
fDate :
7/1/1989 12:00:00 AM
Abstract :
The advantages of using AlGaAs layers of graded Al composition to engineer the cathode of a GaAs Gunn diode are discussed. The specific target of high power operation (68 mW at room temperature) at 94 GHz over a wide range (>1.4 V) of voltage bias has been achieved. Other advantages of the cathode structure are briefly discussed.<>
Keywords :
Gunn diodes; III-V semiconductors; gallium arsenide; 68 mW; 94 GHz; AlGaAs-GaAs; EHF; MM-wave device; cathode structure; graded Al composition; graded AlGaAs injector; high power operation; microwave devices; millimetre wave operation; Cathodes; Doping profiles; Frequency; Gallium arsenide; Gunn devices; Microwave generation; Power generation; Semiconductor diodes; Temperature distribution; Voltage;
Journal_Title :
Electron Device Letters, IEEE
