Title :
IVB-6 hot-carrier reliability of trench transistor
Author :
Aur, S. ; Ping Yang
fDate :
11/1/1987 12:00:00 AM
Keywords :
Circuits; Compressive stress; Crystallography; Degradation; Hot carriers; Silicon compounds; Substrates; Tensile stress; Very large scale integration; Yttrium;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23289
