Title :
VB-2 novel AlGaAs laser with high-quality mirror fabricated by reactive ion-beam etching and in-situ passivation using enclosed UHV processing system
Author :
Uchida, M. ; Kawano, Hiroyuki
fDate :
11/1/1987 12:00:00 AM
Keywords :
Contamination; Electrons; Etching; Gallium arsenide; Mirrors; Passivation; Power lasers; Quantization; Quantum well lasers; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23301
