Title :
The electron impact ionization rate and breakdown voltage in GaAs/Ga/sub 0.7/Al/sub 0.3/As MQW structures
Author :
David, J.P.R. ; Marsland, J.S. ; Roberts, J.S.
Author_Institution :
Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
fDate :
7/1/1989 12:00:00 AM
Abstract :
The electron impact ionization rate ( alpha ) and breakdown voltage (V/sub BD/) experimentally measured in a p/sup +/-i-n/sup +/ diode structure with a GaAs/Ga/sub 0.7/Al/sub 0.3/As multiple quantum-well (MQW) i region are discussed. For structures with GaAs wells of 100 AA and barriers that vary from 7 to 60 AA in thickness, it is found that alpha is always less than alpha in bulk GaAs and that it decreases with increasing barrier thickness. The normalized V/sub BD/ also increases with increasing barrier thickness, confirming a decreasing ionization rate.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; impact ionisation; p-i-n diodes; semiconductor quantum wells; GaAs-Ga/sub 0.7/Al/sub 0.3/As; III-V semiconductor; MQW structures; PIN diodes; barrier thickness; breakdown voltage; electron impact ionization rate; multiple quantum-well; p/sup +/-i-n/sup +/ diode structure; Acoustical engineering; Charge carrier processes; Dark current; Electrons; Gallium arsenide; III-V semiconductor materials; Impact ionization; Quantum well devices; Semiconductor device noise; Semiconductor diodes;
Journal_Title :
Electron Device Letters, IEEE
