DocumentCode
1119103
Title
VB-7 InP/InGaAsP/InGaAs avalanche photodiodes grown by chemical-beam epitaxy
Author
Campbell, Joe C. ; Tsang, W.T. ; Qua, G.J. ; Johnson, Brett C.
Volume
34
Issue
11
fYear
1987
fDate
11/1/1987 12:00:00 AM
Firstpage
2380
Lastpage
2380
Keywords
Avalanche photodiodes; Bandwidth; Chemicals; Dark current; Epitaxial growth; Indium gallium arsenide; Indium phosphide; MOCVD; Molecular beam epitaxial growth; Optimized production technology;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1987.23305
Filename
1487016
Link To Document