Title :
Origin of the enhancement of negative differential resistance at low temperatures in double-barrier resonant tunneling structures
Author :
Wu, J.S. ; Chang, Chun-Yen ; Lee, Chien-Ping ; Wang, Yeong-Her ; Kai, F.
Author_Institution :
Inst. of Electron., Nat. Chiao Tung Univ., Hsin-Chu, Taiwan
fDate :
7/1/1989 12:00:00 AM
Abstract :
An explanation of the increased peak-to-valley current ratio for double-barrier resonant tunneling structures (DBRTSs) operated at low temperatures is proposed. It was found that this phenomenon is an inherent property of DBRTSs not caused by the suppression of thermionic current over barriers. The energy distributions of electrons at different temperatures result in variations of peak and valley currents.<>
Keywords :
negative resistance; semiconductor diodes; semiconductor junctions; solid-state microwave devices; tunnelling; double-barrier; electron energy distribution; low temperatures; negative differential resistance; peak-to-valley current ratio; resonant tunneling structures; Electrons; Frequency; Laboratories; Microwave oscillators; Molecular beam epitaxial growth; Resonant tunneling devices; Scattering; Temperature dependence; Temperature distribution; Thermionic emission;
Journal_Title :
Electron Device Letters, IEEE
