DocumentCode
1119152
Title
An n-channel BICFET in the InGaAs/InAlGaAs/InAlAs material system
Author
Kiely, P.A. ; Taylor, Geoffrey W. ; Izabelle, A. ; Lebby, M.S. ; Tell, B. ; Brown-Goebeler, K.F. ; Chang, Tao-yuan
Author_Institution
AT&T Bell Lab., Holmdel, NJ, USA
Volume
10
Issue
7
fYear
1989
fDate
7/1/1989 12:00:00 AM
Firstpage
304
Lastpage
306
Abstract
An n-channel BICFET in the InGaAs/InAlGaAs/InAlAs material system with a current gain in a large-area device of greater than 900 is discussed. The device structure utilizes a self-aligned refractory emitter contact and high-temperature processing and still obtains an ideality factor of 1.2 for the source input diode.<>
Keywords
III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; heterojunction bipolar transistors; indium compounds; BICFET; HBT; III-V semiconductors; InGaAs-InAlGaAs-InAlAs; bipolar inversion channel FET; current gain; heterojunction material system; high-temperature processing; large-area device; n-channel; self-aligned refractory emitter contact; Conducting materials; Diodes; Etching; FETs; Heterojunctions; Indium compounds; Indium gallium arsenide; Indium phosphide; Substrates;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.29660
Filename
29660
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