DocumentCode
1119159
Title
VIA-3 Resonant-tunneling hot-electron transistors (RHET´s) using InGaAs/In(AlGa)As heterostructure
Author
Imamura, Kousuke ; Muto, Salvatore ; Ohnishi, H. ; Fujii, Teruya ; Yokoyama, Naoki
Volume
34
Issue
11
fYear
1987
fDate
11/1/1987 12:00:00 AM
Firstpage
2382
Lastpage
2382
Keywords
Current measurement; Electrons; Gain measurement; Gallium arsenide; Indium gallium arsenide; Infrared detectors; Resonance; Resonant tunneling devices; Superlattices; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1987.23310
Filename
1487021
Link To Document