DocumentCode
1119221
Title
VIB-1 new hot-carrier-induced degradation phenomena in half-micrometer MOS transistors
Author
Nitayama, A. ; Hamamoto, Takayuki ; Oowaki, Yukihito
Volume
34
Issue
11
fYear
1987
fDate
11/1/1987 12:00:00 AM
Firstpage
2384
Lastpage
2384
Keywords
Degradation; Electrodes; Hot carriers; Impact ionization; MOSFETs; Secondary generated hot electron injection; Shadow mapping; Stress; Very large scale integration; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1987.23316
Filename
1487027
Link To Document