DocumentCode

1119229

Title

VIB-2 Hot-carrier-induced degradation in MOSFET´s studied by recovery temperature spectroscopy (RTS)

Author

Saitoh, Masatoshi ; Kinugawa, M. ; Hashimoto, Koji

Volume

34

Issue

11

fYear

1987

fDate

11/1/1987 12:00:00 AM

Firstpage

2384

Lastpage

2384

Keywords

Annealing; Charge carrier processes; Chemicals; Hot carriers; MOSFET circuits; Resistance heating; Spectroscopy; Stress; Temperature; Thermal degradation;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1987.23317

Filename

1487028