• DocumentCode
    1119254
  • Title

    VIB-3 accurate analysis of impact ionization effects in submicrometer MOSFET devices

  • Author

    Hwang, C.C. ; Dutton, R.W. ; Hess, K.

  • Volume
    34
  • Issue
    11
  • fYear
    1987
  • fDate
    11/1/1987 12:00:00 AM
  • Firstpage
    2385
  • Lastpage
    2385
  • Keywords
    Analytical models; Bipolar transistors; CMOS technology; Current density; Electron devices; Electron mobility; Impact ionization; MOSFET circuits; Photonic band gap; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1987.23319
  • Filename
    1487030
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1119254