DocumentCode

1119272

Title

VIB-6 Hall effect analysis of charge transport in silicon dioxide-silicon nitride double layers

Author

Hiraiwa, A. ; Yugami, J. ; Kusaka, Takuya ; Ohji

Volume

34

Issue

11

fYear

1987

fDate

11/1/1987 12:00:00 AM

Firstpage

2386

Lastpage

2386

Keywords

Computational modeling; Computer simulation; Dielectric constant; Etching; Hall effect; Implants; Laboratories; Magnetic field measurement; Silicon; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1987.23321

Filename

1487032