• DocumentCode
    1119422
  • Title

    Characterization and suppression of drain coupling in submicrometer EPROM cells

  • Author

    Prall, Kirk ; Kinney, Wayne I. ; Macro, Jon

  • Author_Institution
    Signetics Corporation, Albuquerque, NM
  • Volume
    34
  • Issue
    12
  • fYear
    1987
  • fDate
    12/1/1987 12:00:00 AM
  • Firstpage
    2463
  • Lastpage
    2468
  • Abstract
    The EPROM transistor suffers from a capacitive-coupling-based short-channel effect called drain turn-on or Vdtothat limits the maximum drain voltage. Several measurement techniques are demonstrated to characterize the Vdtoeffect. An analytical model is applied to the problem to estimate the effects of process variations to suppress the phenomenon. The effect of Vdtoon scaling is discussed, and circuit and device design techiques to reduce or eliminate this problem are discussed.
  • Keywords
    Analytical models; Capacitance; Capacitors; Coupling circuits; EPROM; Helium; Measurement techniques; Threshold voltage; Voltage control; Voltage measurement;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1987.23336
  • Filename
    1487047
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1119422