DocumentCode
1119447
Title
The relationship between Oxide charge and device degradation: A comparative study of n- and p- channel MOSFET´s
Author
Schwerin, Andreas ; Hänsch, Wilfried ; Weber, Werner
Author_Institution
Siemens Corporate Research and Development, Microelectronics, Munich, Federal Republic of Germany
Volume
34
Issue
12
fYear
1987
fDate
12/1/1987 12:00:00 AM
Firstpage
2493
Lastpage
2500
Abstract
We present a comparative study of device degradation for conventional n- and p-channel MOSFET´s. The experimentally determined features of degradation are investigated with a 2-D simulation including fast and slow interface states as well as channel mobility degradation due to Coulomb scattering off these charges. Three different models concerning kind and spatial distribution are studied. We present a model that self-consistently describes the observed experimental features in the pentode and subthreshold regimes of the device. Furthermore, the substrate current is included in this analysis.
Keywords
Circuit stability; Degradation; FETs; Hot carrier injection; Interface states; MOSFET circuits; Power supplies; Scattering; Stress; Very large scale integration;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1987.23340
Filename
1487051
Link To Document