Measurement and numerical modeling of short-channel MOSFET gate capacitances

The gate-to-source and gate-to-drain capacitance of long-and short-channel n-MOSFET´s have been measured and simulated using a two-dimensional numerical simulator that allows different inversion layer carrier mobility models to be used. Comparison of the experimental and simulated data indicates velocity saturation effect is seen in the capacitance data of the short-channel devices. Transverse-field dependence of the mobility is also found to be necessary to account for the experimental data.