A measurement technique to obtain the recombination lifetime profile in epi layers at any injection level

The measurement technique proposed in [1] to obtain a high injection recombination lifetime profile is extended to any injection level in order to obtain both the majority- and minority-carrier lifetimes as well as its profile along the epi layer. The technique is simulated by numerically solving the relevant equations and the extraction of a varying lifetime profile is demonstrated both at low- and high-injection levels. Some experimental results on n-n⁺epi layers of different doping and thicknesses will be reported to demonstrate the possibilities of this measurement technique, and the extraction of both minority- and majority-carrier lifetime is obtained from the measurements of lifetime as a function of the injection level.