DocumentCode :
1119515
Title :
Counting of deep-level traps using a charge-coupled device
Author :
McGrath, R.D. ; Doty, J. ; Lupino, G. ; Ricker, G. ; Vallerga, J.
Author_Institution :
Polaroid Corporation, Cambridge, MA
Volume :
34
Issue :
12
fYear :
1987
fDate :
12/1/1987 12:00:00 AM
Firstpage :
2555
Lastpage :
2557
Abstract :
Quantization in dark current generation has been observed for the first time through the use of a virtual-phase charge-coupled device. Two sites for bulk silicon dark current have been identified with capture cross sections of 1.8 × 10-15cm2and 5.4 × 10-16cm2, and concentrations of 1.3 × 109cm-3and 1.5 × 108cm-3, respectively.
Keywords :
Charge coupled devices; Dark current; Electron traps; Energy states; Impurities; Leakage current; MOS devices; Silicon; Space charge; Space technology;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1987.23348
Filename :
1487059
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1119515
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