Title :
Improving the non-quasi-static weak-to-strong-inversion four-terminal MOSFET model
Author_Institution :
Bell Communications Research, Inc., Red Bank, NJ
fDate :
12/1/1987 12:00:00 AM
Abstract :
The recently proposed non-quasi-static dc-to-high-frequency weak-to-strong-inversion model for the four-terminal MOSFET is improved in such a way that closer agreement with exact and experimental results can be obtained. It is shown that the modification of a single parameter leads to significant improvement in the model characteristics.
Keywords :
Broadband amplifiers; Capacitance; Circuit stability; Circuit synthesis; Equations; FETs; MOSFET circuits; Predictive models; Taylor series;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23349
