Title :
The influence of degeneracy in the channel on long-channel MOSFET characteristics
Author :
Majkusiak, B. ; Jakubowski, A. ; Lukasiak, L.
Author_Institution :
Technical University of Warsaw, Warsaw, Poland
fDate :
12/1/1987 12:00:00 AM
Abstract :
Fermi-Dirac statistics are incorporated into the Pao-Sah model of the MOS transistor. This modification changes the description insignificantly. The comparison of characteristics computed with the use of Fermi-Dirac and Maxwell-Boltzmann statistics shows that the use of the latter causes small errors even in the case of transistors with extremely thin gate oxides.
Keywords :
Conductors; Electrons; Error analysis; MOSFET circuits; Maxwell-Boltzmann distribution; Semiconductor device doping; Semiconductor process modeling; Substrates; Universal Serial Bus; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23350
