Title :
Model of threshold-voltage fluctuations in GaAs MESFET´s
Author :
Anholt, R. ; Sigmon, Thomas W.
Author_Institution :
Stanford University, Stanford, CA, USA
fDate :
1/1/1987 12:00:00 AM
Abstract :
Due to an increased concentration of Ga vacancies near dislocations, local higher carrier activation of amphoteric implanted Si ions can occur. A quantitative relation between carrier activation and the distance between the device and dislocation is proposed. Monte-Carlo calculations of threshold-voltage fluctuations versus dislocation density are made, and are compared with available data.
Keywords :
Fluctuations; Gallium arsenide; MESFETs; Semiconductor device measurement; Semiconductor device modeling; Shape; Simulated annealing; Solids; Temperature sensors; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1987.26535
