Title :
1/f Noise in (AlGa)As/GaAs Heterostructure Van der Pauw element
Author :
Tacano, Munecazu ; Sugiyama, Yoshinobu ; Taguchi, Takashi
Author_Institution :
Electrotechnical Laboratory, Ibaraki, Japan
fDate :
1/1/1987 12:00:00 AM
Abstract :
Both the current and Hall terminals of an Al0.3Ga0.7As/ GaAs heterostructure Van der Pauw element show the pure 1/f noise characteristics without any generation-recombination noise with a difference of 17 dBV/√Hz between them. The noise level across the Hall terminals is equal to that of the thermal noise at about 1 kHz, and the minimum magnetic field is estimated from the Hall terminal noise and the maximum magnetic field sensitivity as about 2 nT.
Keywords :
Gallium arsenide; HEMTs; Helium; Low-frequency noise; MODFETs; Magnetic fields; Magnetic noise; Noise generators; Noise level; Temperature;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1987.26537
