A super self-aligned selectively grown SiGe base (SSSB) bipolar transistor fabricated by cold-wall type UHV/CVD technology

Author

Sato, Fumihiko ; Tatsumi, Toru ; Hashimoto, Takasuke ; Tashiro, Tsutomu

Author_Institution

ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan

Volume

41

Issue

8

fYear

1994

fDate

8/1/1994 12:00:00 AM

Firstpage

1373

Lastpage

1378

Abstract

A novel selective epitaxial growth (SEG) technology for fabricating the intrinsic SiGe-base layer of a double poly-Si self-aligned bipolar transistor has been developed. Selectively grown Si and SiGe-alloy layers were obtained by using Si₂H₆+GeH₄+Cl₂+B₂H₆ gas system using cold-wall ultra-high vacuum (UHV)/CVD. We have optimized the growth conditions so that Si or SiGe grows selectively against Si₃N₄ both on single crystalline Si and on poly-Si of a structure consisting of a poly-Si layer overhanging the single crystalline Si substrate. The selective growth is maintained until the growth from the bottom Si and the top poly-Si coalesce. This selective growth permits a novel emitter-base self-aligned transistor which we call a super self-aligned selectively grown SiGe base (SSSB) HBT

Keywords

Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; semiconductor growth; semiconductor materials; silicon; vapour phase epitaxial growth; B₂H₆; Cl₂; GeH₄; SEG technology; Si; Si-SiGe; Si₂H₆; Si₂H₆+GeH₄+Cl₂+B ₂H₆ gas system; Si₂H₆-GeH₄-Cl₂-B ₂H₆; Si₃N₄; cold-wall type UHV/CVD technology; double poly-Si HBT; growth conditions; intrinsic SiGe-base layer; polysilicon; selective epitaxial growth; self-aligned bipolar transistor; single crystalline Si substrate; super self-aligned selectively grown SiGe base; ultra-high vacuum; Bipolar transistors; Boron; Crystallization; Epitaxial growth; Frequency estimation; Germanium silicon alloys; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Photonic band gap; Silicon germanium;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.297732

Filename

297732