Title :
A super self-aligned selectively grown SiGe base (SSSB) bipolar transistor fabricated by cold-wall type UHV/CVD technology
Author :
Sato, Fumihiko ; Tatsumi, Toru ; Hashimoto, Takasuke ; Tashiro, Tsutomu
Author_Institution :
ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan
fDate :
8/1/1994 12:00:00 AM
Abstract :
A novel selective epitaxial growth (SEG) technology for fabricating the intrinsic SiGe-base layer of a double poly-Si self-aligned bipolar transistor has been developed. Selectively grown Si and SiGe-alloy layers were obtained by using Si2H6+GeH4+Cl2+B2 H6 gas system using cold-wall ultra-high vacuum (UHV)/CVD. We have optimized the growth conditions so that Si or SiGe grows selectively against Si3N4 both on single crystalline Si and on poly-Si of a structure consisting of a poly-Si layer overhanging the single crystalline Si substrate. The selective growth is maintained until the growth from the bottom Si and the top poly-Si coalesce. This selective growth permits a novel emitter-base self-aligned transistor which we call a super self-aligned selectively grown SiGe base (SSSB) HBT
Keywords :
Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; semiconductor growth; semiconductor materials; silicon; vapour phase epitaxial growth; B2H6; Cl2; GeH4; SEG technology; Si; Si-SiGe; Si2H6; Si2H6+GeH4+Cl2+B 2H6 gas system; Si2H6-GeH4-Cl2-B 2H6; Si3N4; cold-wall type UHV/CVD technology; double poly-Si HBT; growth conditions; intrinsic SiGe-base layer; polysilicon; selective epitaxial growth; self-aligned bipolar transistor; single crystalline Si substrate; super self-aligned selectively grown SiGe base; ultra-high vacuum; Bipolar transistors; Boron; Crystallization; Epitaxial growth; Frequency estimation; Germanium silicon alloys; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Photonic band gap; Silicon germanium;
Journal_Title :
Electron Devices, IEEE Transactions on
