DocumentCode :
1119836
Title :
Microwave performance of InAlAs/InGaAs/InP MODFET´s
Author :
Peng, C.K. ; Aksun, M.I. ; Ketterson, A.A. ; Morkoç, Hadis ; Gleason, K.R.
Author_Institution :
University of Illinois at Urbana-Champaign, Urbana, IL
Volume :
8
Issue :
1
fYear :
1987
fDate :
1/1/1987 12:00:00 AM
Firstpage :
24
Lastpage :
26
Abstract :
Modulation-doped InAlAs/InGaAs/InP structures were grown by molecular beam epitaxy (MBE) and fabricated into FET\´s with excellent RF gain performance. The intrinsic transconductance was about 400 mS/mm at 300 K. Current gain cutoff frequencies of up to 26.5 GHz were obtained in 1-µm gate devices. Extremely small S12 and large S21 led to a very large 
of 62 GHz. These results represent the best reported figures for 1-µm devices in this material system and slightly better than those obtained in recently developed pseudomorphic modulation-doped field effect transistors (MODFET\´s).
of 62 GHz. These results represent the best reported figures for 1-µm devices in this material system and slightly better than those obtained in recently developed pseudomorphic modulation-doped field effect transistors (MODFET\´s).Keywords :
Epitaxial layers; FETs; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Molecular beam epitaxial growth; Performance gain; Radio frequency;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1987.26538
Filename :
1487088
Link To Document :
