A low-capacitance bipolar/BiCMOS isolation technology. I. Concept, fabrication process, and characterization

Author

Burghartz, Joachim N. ; McIntosh, Robert C. ; Stanis, Carol L.

Author_Institution

Res. Div., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

41

Issue

8

fYear

1994

fDate

8/1/1994 12:00:00 AM

Firstpage

1379

Lastpage

1387

Abstract

A device isolation structure for low-parasitic bipolar transistor integration is presented. The concept involves two selective epitaxial growth steps (SEG) and two polishing cycles which replace the collector-epitaxy and the deep/shallow trench formation in conventional device isolation. With an optimum device layout, the collector-substrate capacitance is reduced to ≃30%, the collector-base capacitance to ≃70%, and the extrinsic base contact resistance to <50% compared to trench isolation. The combination of SEG and polishing makes it possible to form SOI regions with locally different SOI thicknesses on the same wafer, so that fully depleted CMOS and vertical bipolar transistors can be combined in a SOI-BiCMOS technology

Keywords

BiCMOS integrated circuits; capacitance; circuit layout; epitaxial growth; integrated circuit technology; polishing; semiconductor-insulator boundaries; silicon; SEG steps; SOI regions; SOI-BiCMOS technology; Si; bipolar/BiCMOS isolation technology; characterization; collector-base capacitance; collector-substrate capacitance; device isolation structure; extrinsic base contact resistance; fabrication process; low-capacitance isolation technology; low-parasitic bipolar transistor integration; optimum device layout; polishing cycles; selective epitaxial growth; vertical bipolar transistors; BiCMOS integrated circuits; Bipolar transistors; CMOS technology; Capacitance; Carbon capture and storage; Epitaxial growth; Fabrication; Integrated circuit interconnections; Isolation technology; Substrates;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.297733

Filename

297733