DocumentCode :
1119847
Title :
Effects of H+implant dose and film deposition conditions on polycrystalline-Si MOSFET characteristics
Author :
Rodder, M. ; Antoniadis, Dimitri A. ; Scholz, F. ; Kalnitsky, A.
Author_Institution :
Massachusetts Institute of Technology, Cambridge, MA
Volume :
8
Issue :
1
fYear :
1987
fDate :
1/1/1987 12:00:00 AM
Firstpage :
27
Lastpage :
29
Abstract :
The effects of varying 1) hydrogen implant dose and 2) film deposition conditions have been correlated with device characteristics of accumulation-mode p-channel MOSFET´s fabricated in small-grain polycrystalline-Si. Using a hydrogen implant dose of 1015cm-2with a subsequent anneal of 400°C for 10 min in N2in the presence of a top encapsulating LPCVD Si3N4layer, MOSFET´s with an ON/OFF current ratio of ≈ 2 × 108have been obtained at a drain-to-source voltage of -4 V.
Keywords :
Annealing; Crystallization; Current measurement; Etching; Hydrogen; Implants; MOSFET circuits; Semiconductor films; Telecommunications; Voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1987.26539
Filename :
1487089
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1119847
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