Title :
GaAs optoelectronic integrated receiver with high-output fast-response characteristics
Author :
Hamaguchi, H. ; Makiuchi, M. ; Kumai, T. ; Wada, Osamu
Author_Institution :
Fujitsu Laboratories Ltd., Atsugi, Japan
fDate :
1/1/1987 12:00:00 AM
Abstract :
For obtaining high-output level and high-speed response in a GaAs-based optoelectronic integrated receiver, a circuit involving a two-stage amplifier was first designed and fabricated. A high sensitivity of 400 V/W has been achieved while preserving a high-speed response of 2-Gbit/s nonreturn to zero (NRZ).
Keywords :
Broadband amplifiers; Capacitance; Circuits; Degradation; Gallium arsenide; Optical signal processing; Optoelectronic devices; Photodetectors; Photodiodes; Pulse amplifiers;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1987.26543
