Hot carrier effects on analog performance of N- and P-MOSFET´s with oxynitride gate dielectrics

Author

Joshi, Aniruddha B. ; Kwong, Dim-Lee

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

Volume

41

Issue

8

fYear

1994

fDate

8/1/1994 12:00:00 AM

Firstpage

1465

Lastpage

1467

Abstract

In this paper we report the impact of hot-carrier stress on analog performance of n- and p-MOSFET´s with conventional oxide, NH₃-nitrided oxide (RTN) and reoxidized nitrided oxide (RTN/RTO) as gate dielectrics. Changes due to hot-carrier stress in crucial analog parameters viz., drain output resistance, voltage gain, and input offset voltage of a source coupled differential MOSFET pair are investigated. Results show that RTN/RTO gate dielectrics suppress degradation of analog parameters in n-MOSFET´s but increase it slightly in p-MOSFET´s, as compared to conventional oxide MOSFET´s

Keywords

hot carriers; insulated gate field effect transistors; nitridation; oxidation; rapid thermal processing; semiconductor technology; N-MOSFETs; NH₃; NH₃-nitrided oxide; P-MOSFETs; RTN; RTN/RTO; analog performance; degradation; drain output resistance; hot-carrier stress; input offset voltage; oxynitride gate dielectrics; reoxidized nitrided oxide; source coupled differential MOSFET pair; voltage gain; Degradation; Dielectric measurements; Electrons; Hot carrier effects; Hot carriers; Interface states; MOSFET circuits; Microelectronics; Stress measurement; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.297744

Filename

297744