Title :
A comparative study of n+ ohmic contact resistance for PdInGe and NiGeAu metallizations on GaAs
Author :
Brooks, Michael B. ; Sigmon, Thomas W.
Author_Institution :
2351 Caringa Way, Carlsbad, CA, USA
fDate :
8/1/1994 12:00:00 AM
Abstract :
NiGeAu and PdInGe metallizations are used for n+ ohmic contacts to GaAs. One-dimensional analytic and two-dimensional numerical analyses are presented using experimental data obtained from transmission line and cross bridge Kelvin test structures. Results from the 1-D and 2-D models show that the former analysis overestimates the specific contact resistance by at least an order of magnitude. This discrepancy is shown to be test structure dependent and metallization independent
Keywords :
III-V semiconductors; contact resistance; gallium arsenide; metallisation; ohmic contacts; semiconductor technology; 1-D models; 2-D models; GaAs-NiGeAu; GaAs-PdInGe; cross bridge Kelvin test structures; metallizations; n+ ohmic contact resistance; one-dimensional analytic analyses; specific contact resistance; transmission line structures; two-dimensional numerical analyses; Bridges; Contact resistance; Electric resistance; Electrical resistance measurement; Flanges; Kelvin; Metallization; Ohmic contacts; Proximity effect; Two dimensional displays;
Journal_Title :
Electron Devices, IEEE Transactions on
