• DocumentCode
    1119981
  • Title

    A comparative study of n+ ohmic contact resistance for PdInGe and NiGeAu metallizations on GaAs

  • Author

    Brooks, Michael B. ; Sigmon, Thomas W.

  • Author_Institution
    2351 Caringa Way, Carlsbad, CA, USA
  • Volume
    41
  • Issue
    8
  • fYear
    1994
  • fDate
    8/1/1994 12:00:00 AM
  • Firstpage
    1469
  • Lastpage
    1471
  • Abstract
    NiGeAu and PdInGe metallizations are used for n+ ohmic contacts to GaAs. One-dimensional analytic and two-dimensional numerical analyses are presented using experimental data obtained from transmission line and cross bridge Kelvin test structures. Results from the 1-D and 2-D models show that the former analysis overestimates the specific contact resistance by at least an order of magnitude. This discrepancy is shown to be test structure dependent and metallization independent
  • Keywords
    III-V semiconductors; contact resistance; gallium arsenide; metallisation; ohmic contacts; semiconductor technology; 1-D models; 2-D models; GaAs-NiGeAu; GaAs-PdInGe; cross bridge Kelvin test structures; metallizations; n+ ohmic contact resistance; one-dimensional analytic analyses; specific contact resistance; transmission line structures; two-dimensional numerical analyses; Bridges; Contact resistance; Electric resistance; Electrical resistance measurement; Flanges; Kelvin; Metallization; Ohmic contacts; Proximity effect; Two dimensional displays;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.297746
  • Filename
    297746
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1119981