• DocumentCode
    1120015
  • Title

    The amorphous Si/SiC heterojunction color-sensitive phototransistor

  • Author

    Chang, Chun-Yen ; Chun-Yen Chang ; Fang, Y.K. ; Jwo, S.C.

  • Author_Institution
    National Cheng Kung University, Taiwan, Republic of China
  • Volume
    8
  • Issue
    2
  • fYear
    1987
  • fDate
    2/1/1987 12:00:00 AM
  • Firstpage
    64
  • Lastpage
    65
  • Abstract
    An amorphous Si/SiC heterojunction color-sensitive phototransistor was successfully fabricated by plasma-enhanced chemical vapor deposition. The structure is glass/ITO/a-Si(n+-i)/a-SiC(p+-i-n+)/Al. The device is a bulk barrier transistor with wide-bandgap amorphous SiC emitter and base. The phototransistor revealed a very high optical gain of 40 and a response speed of 10 µs at an input light power of 5 µW and a collector current of 0.12 mA at a voltage of 14 V. The peak response occurs at 610 nm under 1-V bias and changes to 420 and 540 nm under 7- and 13-V biases, respectively.
  • Keywords
    Amorphous materials; Chemical vapor deposition; Glass; Heterojunctions; Indium tin oxide; Phototransistors; Plasma chemistry; Plasma devices; Silicon carbide; Stimulated emission;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1987.26553
  • Filename
    1487103
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1120015