Title :
Analysis of current-temperature-light characteristics of GaAsP light-emitting diodes
Author :
Tanaka, Y. ; Toyama, T.
Author_Institution :
Res. & Dev. Center, Eastman Kodak Ltd., Kanagawa, Japan
fDate :
8/1/1994 12:00:00 AM
Abstract :
The current-temperature-light characteristics of GaAsP light-emitting diodes have been studied. Functional forms of the light intensity and the temperature coefficient (temperature derivative of the light intensity) dependence on the electric current have been obtained. These functional forms agree well with experimental results
Keywords :
III-V semiconductors; gallium arsenide; light emitting diodes; GaAsP; GaAsP light-emitting diodes; current-temperature-light characteristics; electric current; light intensity; temperature coefficient; Current; Electron devices; Gallium arsenide; Light emitting diodes; Light scattering; MESFETs; Maxwell equations; Particle scattering; Solid state circuits; Temperature dependence;
Journal_Title :
Electron Devices, IEEE Transactions on
