Title :
A subthreshold current model for GaAs MESFET´s
Author :
Chang, C.T.M. ; Vrotsos, Thomas ; Frizzell, Michael T. ; Carroll, R.
Author_Institution :
Texas Instruments Incorporated, Dallas, TX, USA
fDate :
2/1/1987 12:00:00 AM
Abstract :
A GaAs MESFET model capable of accurately describing currents in the subthreshold region is described. The model is based on the concept of drain-induced barrier lowering (DIBL) together with the reverse-bias Schottky diode conduction. Agreement between measured and calculated data based on this model was excellent.
Keywords :
Electrons; Gallium arsenide; Kelvin; Low voltage; MESFETs; SPICE; Schottky barriers; Subthreshold current; Temperature; Tunneling;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1987.26555
