• DocumentCode
    1120035
  • Title

    A subthreshold current model for GaAs MESFET´s

  • Author

    Chang, C.T.M. ; Vrotsos, Thomas ; Frizzell, Michael T. ; Carroll, R.

  • Author_Institution
    Texas Instruments Incorporated, Dallas, TX, USA
  • Volume
    8
  • Issue
    2
  • fYear
    1987
  • fDate
    2/1/1987 12:00:00 AM
  • Firstpage
    69
  • Lastpage
    72
  • Abstract
    A GaAs MESFET model capable of accurately describing currents in the subthreshold region is described. The model is based on the concept of drain-induced barrier lowering (DIBL) together with the reverse-bias Schottky diode conduction. Agreement between measured and calculated data based on this model was excellent.
  • Keywords
    Electrons; Gallium arsenide; Kelvin; Low voltage; MESFETs; SPICE; Schottky barriers; Subthreshold current; Temperature; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1987.26555
  • Filename
    1487105
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1120035