• DocumentCode
    1120088
  • Title

    High-transconductance p-channel InGaAs/AlGaAs modulation-doped field effect transistors

  • Author

    Lee, Chien-Ping ; Wang, H.T. ; Sullivan, G.J. ; Sheng, N.H. ; Miller, D.L.

  • Author_Institution
    Rockwell International Science Center, Thousand Oaks, CA
  • Volume
    8
  • Issue
    3
  • fYear
    1987
  • fDate
    3/1/1987 12:00:00 AM
  • Firstpage
    85
  • Lastpage
    87
  • Abstract
    A p-channel quantum-well InGaAs/AlGaAs modulation-doped field effect transistor has been fabricated. With a 1-µm gate, the device exhibits transconductances of 17.8 and 89 mS/mm at room temperature and 77 K, respectively. Experimental results indicate an extrinsic transconductance greater than 200 mS/mm is achievable with reduced ohmic contact resistance and gate leakage.
  • Keywords
    Epitaxial layers; FETs; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; Ohmic contacts; Plasma temperature; Threshold voltage; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1987.26560
  • Filename
    1487110
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1120088