Title :
Buried-channel GaAs MESFET´s with frequency-independent output conductance
Author :
Canfield, P. ; Medinger, J. ; Forbes, Leonard
Author_Institution :
Oregon State University, Corvallis, OR, USA
fDate :
3/1/1987 12:00:00 AM
Abstract :
The output conductance of GaAs MESFET´s is shown to be a function of frequency and to have a well-defined temperature dependence. This behavior is in agreement with other reports of the behavior of GaAs ion-implanted MESFET´s. The output conductance of buried-channel GaAs MESFET´s is shown to be independent of frequency and temperature. This is an important improvement in the output characteristics with many implications for GaAs analog and digital circuits.
Keywords :
Amplifiers; Battery charge measurement; Digital circuits; Frequency dependence; Gallium arsenide; MESFETs; Signal generators; Temperature dependence; Temperature sensors; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1987.26561
