• DocumentCode
    1120166
  • Title

    A lateral silicon-on-insulator bipolar transistor with a self-aligned base contact

  • Author

    Sturm, James C. ; McVittie, James P. ; Gibbons, James F. ; Pfeiffer, L.

  • Author_Institution
    Princeton University, Princeton, NJ
  • Volume
    8
  • Issue
    3
  • fYear
    1987
  • fDate
    3/1/1987 12:00:00 AM
  • Firstpage
    104
  • Lastpage
    106
  • Abstract
    A novel lateral bipolar transistor structure in silicon-on-insulator (SOI) is presented. The structure allows for a minimum geometry base width yet still provides for a metal contact to the entire base region. Fabricated transistors exhibit a base resistance of less than 20 Ω.
  • Keywords
    Bipolar transistors; Contacts; Etching; Fabrication; Implants; Lithography; MOSFETs; Resists; Silicon on insulator technology; Surface resistance;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1987.26567
  • Filename
    1487117
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1120166