• DocumentCode
    1120206
  • Title

    Improved GaAs power FET Performance using Be Co-implantation

  • Author

    Macksey, Harry M. ; Brehm, Gailon E. ; Matteson, S.E.

  • Author_Institution
    Texas Instruments Incorporated, Dallas, TX
  • Volume
    8
  • Issue
    3
  • fYear
    1987
  • fDate
    3/1/1987 12:00:00 AM
  • Firstpage
    116
  • Lastpage
    117
  • Abstract
    Be co-implantation following the standard Si donor implantation improves the performance of directly implanted GaAs power FET´s. The doping profile abruptness increases from 88 to 48 nm/decade. The device efficiency increases by at least 15 percent and the maximum output power by about 10 percent due to reduction in gate-drain breakdown current.
  • Keywords
    Annealing; Chemicals; Doping profiles; FETs; Gallium arsenide; Helium; Implants; Power generation; Resists; Wet etching;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1987.26571
  • Filename
    1487121
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1120206