Title :
GaAs E/D MESFET 1-kbit static RAM fabricated on silicon substrate
Author :
Shichijo, Hisashi ; Lee, J.W. ; McLevige, Will V. ; Taddiken, A.H. ; Taddiken, A.H.
Author_Institution :
Texas Instruments Incorporated, Dallas, TX
fDate :
3/1/1987 12:00:00 AM
Abstract :
A GaAs enhancement/depletion (E/D) MESFET 1-kbit static RAM has been fabricated on a 2-in GaAs-on-Si substrate. This is the most complex GaAs circuit reported to date for GaAs-on-Si material. The GaAs layer is grown on a
Keywords :
Annealing; Application specific integrated circuits; Digital integrated circuits; Gallium arsenide; Instruments; Laboratories; MESFETs; Random access memory; Silicon; Surface morphology;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1987.26573
