• DocumentCode
    1120225
  • Title

    GaAs E/D MESFET 1-kbit static RAM fabricated on silicon substrate

  • Author

    Shichijo, Hisashi ; Lee, J.W. ; McLevige, Will V. ; Taddiken, A.H. ; Taddiken, A.H.

  • Author_Institution
    Texas Instruments Incorporated, Dallas, TX
  • Volume
    8
  • Issue
    3
  • fYear
    1987
  • fDate
    3/1/1987 12:00:00 AM
  • Firstpage
    121
  • Lastpage
    123
  • Abstract
    A GaAs enhancement/depletion (E/D) MESFET 1-kbit static RAM has been fabricated on a 2-in GaAs-on-Si substrate. This is the most complex GaAs circuit reported to date for GaAs-on-Si material. The GaAs layer is grown on a
  • Keywords
    Annealing; Application specific integrated circuits; Digital integrated circuits; Gallium arsenide; Instruments; Laboratories; MESFETs; Random access memory; Silicon; Surface morphology;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1987.26573
  • Filename
    1487123
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1120225