DocumentCode
1120296
Title
Accelerated testing of time-dependent breakdown of SiO2
Author
Chen, I.C. ; Hu, Chenming
Author_Institution
University of California, Berkeley, CA
Volume
8
Issue
4
fYear
1987
fDate
4/1/1987 12:00:00 AM
Firstpage
140
Lastpage
142
Abstract
Electric-field acceleration factor β is the slope of the 
versus Eox curve, where tBD is the time to breakdown at oxide field Eox . We report that β is not a constant but proportional to 
. This is the main cause of the wide divergence of β values reported in the literature. The reported oxide thickness dependence of β is believed to be a result of the higher electron trap densities in thicker oxides. Oxide lifetime extrapolation using , or better, 
against 
plots is more accurate and has a theoretical basis. Highly accelerated oxide testing appears to be feasible especially for very thin oxides.
versus E . This is the main cause of the wide divergence of β values reported in the literature. The reported oxide thickness dependence of β is believed to be a result of the higher electron trap densities in thicker oxides. Oxide lifetime extrapolation using , or better, against plots is more accurate and has a theoretical basis. Highly accelerated oxide testing appears to be feasible especially for very thin oxides.Keywords
Acceleration; Charge carrier processes; Electric breakdown; Electron traps; Fabrication; Life estimation; Numerical models; Stress; Testing; Tunneling;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1987.26580
Filename
1487130
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