DocumentCode :
1120305
Title :
The effects of thermal nitridation conditions on the reliability of thin nitrided oxide films
Author :
Tsai, Hong-Hsiang ; Wu, Liang-Chong ; Wu, Ching-Yuan ; Hu, Chenming
Author_Institution :
National Chiao-Tung University, Taiwan, Republic of China
Volume :
8
Issue :
4
fYear :
1987
fDate :
4/1/1987 12:00:00 AM
Firstpage :
143
Lastpage :
145
Abstract :
MIS capacitors on n-type silicon substrate with thin oxide films thermally nitrided in NH3gas ambient at different temperatures and for different times have been fabricated. The effects of nitridation temperature and time on the properties of the thin nitrided oxide films have been examined and analyzed by using a constant current stress. It is found that the oxide films nitrided at 900°C exhibit much improved total charge to breakdown and interface trap generation if proper nitridation time is used. The superior characteristics of the fabricated nitrided oxide films using the proposed optimum conditions are suitable for existing CMOS/VLSI applications.
Keywords :
Breakdown voltage; Capacitors; Electronics industry; Industrial electronics; Insulation; Oxidation; Semiconductor films; Silicon on insulator technology; Stress; Temperature;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1987.26581
Filename :
1487131
Link To Document :
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