Title :
A stripe-geometry InGaAsP/InP heterojunction bipolar transistor suitable for optical integration
Author :
Chen, T.R. ; Zhuang, Y.H. ; Chang, B. ; Yi, M.B. ; Yariv, Amnon
Author_Institution :
California Institute of Technology, Pasadena, CA
fDate :
5/1/1987 12:00:00 AM
Abstract :
A stripe-geometry InGaAsP/InP heterojunction bipolar transistor (HBT) was fabricated for the first time. High current gain (β > 500) and high collector current (Ic> 200 mA) were obtained in devices with an emitter-down configuration. The HBT was successfully integrated with a double-heterostructure (DH) laser, resulting in the first realization of laser operation in a vertical integration.
Keywords :
Bipolar transistors; DH-HEMTs; Geometrical optics; Heterojunction bipolar transistors; Indium phosphide; Integrated optics; Optical control; Optical device fabrication; Substrates; Zinc;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1987.26599
