• DocumentCode
    1120490
  • Title

    A stripe-geometry InGaAsP/InP heterojunction bipolar transistor suitable for optical integration

  • Author

    Chen, T.R. ; Zhuang, Y.H. ; Chang, B. ; Yi, M.B. ; Yariv, Amnon

  • Author_Institution
    California Institute of Technology, Pasadena, CA
  • Volume
    8
  • Issue
    5
  • fYear
    1987
  • fDate
    5/1/1987 12:00:00 AM
  • Firstpage
    191
  • Lastpage
    193
  • Abstract
    A stripe-geometry InGaAsP/InP heterojunction bipolar transistor (HBT) was fabricated for the first time. High current gain (β > 500) and high collector current (Ic> 200 mA) were obtained in devices with an emitter-down configuration. The HBT was successfully integrated with a double-heterostructure (DH) laser, resulting in the first realization of laser operation in a vertical integration.
  • Keywords
    Bipolar transistors; DH-HEMTs; Geometrical optics; Heterojunction bipolar transistors; Indium phosphide; Integrated optics; Optical control; Optical device fabrication; Substrates; Zinc;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1987.26599
  • Filename
    1487149
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1120490