Title :
High-speed frequency dividers using self-aligned AlGaAs/GaAs heterojunction bipolar transistors
Author :
Ishibashi, T. ; Yamauchi, Y. ; Nakajima, O. ; Nagata, K. ; Ito, H.
Author_Institution :
NTT Electrical Communications Laboratories, Kanagawa, Japan
fDate :
5/1/1987 12:00:00 AM
Abstract :
A divide-by-four frequency divider and ring oscillators have been fabricated employing self-aligned AlGaAs/GaAs heterojunction bipolar transistors (HBT´s). Maximum toggle frequency of 13.7 GHz and propagation delay time of 17.2 ps are achieved in ECL gate circuitry. These values are the highest and the lowest in ECL circuits and in bipolar circuits, respectively, ever reported.
Keywords :
Capacitance; Circuits; Electrodes; Frequency conversion; Gallium arsenide; Heterojunction bipolar transistors; Logic devices; Logic gates; Propagation delay; Protons;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1987.26600