Improved morphology of Au-Based contacts to GaAs

Evidence is given that Au and Au-based contacts do not react with GaAs substrate when alloyed with a CVD SiO2layer deposited on top of the metal. Reduced reactivity results in a significantly better morphology of the contact as compared with those alloyed conventionally. Lower electrical resistivities of Au(Zn)/p-GaAs and Au(GeNi)/n-GaAs ohmic contacts are obtained in a wider range of processing temperatures.