• DocumentCode
    1120561
  • Title

    Hot-carrier drifts in submicrometer p-channel MOSFET´s

  • Author

    Weber, W. ; Lau, F.

  • Author_Institution
    Siemens AG, Munich, Germany
  • Volume
    8
  • Issue
    5
  • fYear
    1987
  • fDate
    5/1/1987 12:00:00 AM
  • Firstpage
    208
  • Lastpage
    210
  • Abstract
    Hot-carrier-induced shifts in p-channel MOSFET operating characteristics have been observed down to drain voltages of - 6 V. Cases are discussed in which p-MOSFET´s show up to two orders of magnitude larger degradation than corresponding n-MOSFET´s. The shifts include current and threshold voltage increases. From dependences on stress gate voltage, stress drain voltage, time, and substrate current, the hot-carrier origin of the shifts is specified in detail.
  • Keywords
    CMOS technology; Degradation; Electric variables; Hot carriers; MOSFET circuits; Physics; Research and development; Stress; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1987.26605
  • Filename
    1487155
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1120561