Title :
MOSFET substrate current model including energy transport
Author :
Fukuma, Masao ; Lui, Wayne W.
Author_Institution :
NEC Corporation, Kawasaki, Japan
fDate :
5/1/1987 12:00:00 AM
Abstract :
A new MOSFET substrate current model, incorporating energy transport, is proposed. It was found that a non-steady-state electron transport effect and two effects attributed to electron pressure are essential to calculate the substrate current characteristics accurately. The predictions from the present model compare favorably with the experimental data for MOSFET´s with effective channel length down to 0.45 µm.
Keywords :
Distribution functions; Electrons; Impact ionization; Laboratories; MOSFET circuits; Microelectronics; National electric code; Predictive models; Steady-state; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1987.26607
