• DocumentCode
    1120582
  • Title

    MOSFET substrate current model including energy transport

  • Author

    Fukuma, Masao ; Lui, Wayne W.

  • Author_Institution
    NEC Corporation, Kawasaki, Japan
  • Volume
    8
  • Issue
    5
  • fYear
    1987
  • fDate
    5/1/1987 12:00:00 AM
  • Firstpage
    214
  • Lastpage
    216
  • Abstract
    A new MOSFET substrate current model, incorporating energy transport, is proposed. It was found that a non-steady-state electron transport effect and two effects attributed to electron pressure are essential to calculate the substrate current characteristics accurately. The predictions from the present model compare favorably with the experimental data for MOSFET´s with effective channel length down to 0.45 µm.
  • Keywords
    Distribution functions; Electrons; Impact ionization; Laboratories; MOSFET circuits; Microelectronics; National electric code; Predictive models; Steady-state; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1987.26607
  • Filename
    1487157
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1120582