• DocumentCode
    1120592
  • Title

    Application of O+implantation in inverted InGaAs/InAlAs heterojunction bipolar transistors

  • Author

    Lee, Wai ; Fonstad, Clifton G.

  • Author_Institution
    Massachusetts Institute of Technology, Cambridge, MA
  • Volume
    8
  • Issue
    5
  • fYear
    1987
  • fDate
    5/1/1987 12:00:00 AM
  • Firstpage
    217
  • Lastpage
    219
  • Abstract
    Deep O+ implantation has been used to create a high-resistivity layer buried beneath the Be+ -implanted extrinsic base-emitter junction region of In0.52Al0.48As/In0.53Ga0.47As inverted (emitter-down) heterojunction bipolar transistors (HBT´s). The O+ -implanted layer remains highly resistive even after a rapid thermal annealing step at 700°C to activate the Be+ implants. With the O+ implantation, the forward current of the extrinsic base-emitter diode is significantly reduced. HBT´s with Be+ - and O+ -implanted extrinsic base regions exhibit current gains of ≃ 100 at a collector current density in excess of 103A/cm2. Another benefit from the deep O+ -implanted layer is a dramatic reduction in the junction capacitance of the extrinsic base-emitter diode.
  • Keywords
    Capacitance; Current density; Diodes; Heterojunction bipolar transistors; Implants; Indium compounds; Indium phosphide; Molecular beam epitaxial growth; Rapid thermal annealing; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1987.26608
  • Filename
    1487158
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1120592