Title :
Impact of SOI Substrate on the Radiation Response of UltraThin Transistors Down to the 20 nm Node
Author :
Gaillardin, M. ; Martinez, Manuel ; Paillet, P. ; Andrieu, F. ; Girard, S. ; Raine, M. ; Marcandella, C. ; Duhamel, O. ; Richard, N. ; Faynot, O.
Author_Institution :
DIF, CEA, Arpajon, France
Abstract :
In this paper we investigate the Total Ionizing Dose (TID) response of an UltraThin Buried-OXide (UTBOX) on a Fully Depleted Silicon-On-Insulator (FDSOI) high-k/metal gate technology. The impact of thinning the BOX and of the use of a Ground Plane (GP) at the back side of the BOX on the TID behavior are discussed by comparing their results to ionizing radiation experiments performed on reference FDSOI devices.
Keywords :
elemental semiconductors; ionisation; radiation hardening (electronics); silicon; silicon-on-insulator; transistors; FDSOI; GP; Si; TID; UTBOX; fully depleted silicon-on-insulator high-k-metal gate technology; ground plane; ionizing radiation experiment; size 20 nm; total ionizing dose response; ultrathin buried-oxide; ultrathin transistor; Charge carrier processes; Couplings; Logic gates; Radiation effects; Silicon; Substrates; Transistors; Fully d; SOI; TID; nanometer scale; radiation effects; ultra-Thin BOX (UTBOX);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2013.2249093
