• DocumentCode
    1120627
  • Title

    A high-speed frequency divider using n+-Ge Gate AlGaAs/GaAs MISFET´s

  • Author

    Fujita, Shuichi ; Hirano, Matoto ; Maezawa, Koichi ; Mizutani, Takashi

  • Author_Institution
    NTT Electrical Communications Laboratories, Kanagawa, Japan
  • Volume
    8
  • Issue
    5
  • fYear
    1987
  • fDate
    5/1/1987 12:00:00 AM
  • Firstpage
    226
  • Lastpage
    227
  • Abstract
    A high-speed divide-by-four static frequency divider is fabricated using n+ -Ge gate AlGaAs/GaAs heterostructure MISFET´s. The divider circuit consists of two master-slave T-type flip-flops (T-FF´s) and an output buffer based on source-coupled FET logic (SCFL). A maximum toggle frequency of 11.3 GHz with a power dissipation of 219 mW per T-F/F is obtained at 300 K using 1.0-µm gate FET´s.
  • Keywords
    Electrons; FETs; Fabrication; Flip-flops; Frequency conversion; Gallium arsenide; Logic circuits; MISFETs; Master-slave; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1987.26611
  • Filename
    1487161
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1120627