• DocumentCode
    1120643
  • Title

    A mobility model for submicrometer MOSFET device simulations

  • Author

    Hiroki, A. ; Odanaka, S. ; Ohe, K. ; Esaki, H.

  • Author_Institution
    Matsushita Electric Industrial Company, Ltd., Osaka, Japan
  • Volume
    8
  • Issue
    5
  • fYear
    1987
  • fDate
    5/1/1987 12:00:00 AM
  • Firstpage
    231
  • Lastpage
    233
  • Abstract
    This paper describes a mobility model for submicrometer MOSFET device simulations. The model includes the quantum effects of electrons in the inversion layer proposed by Schwarz et al. By comparison with experimental data from scaled MOSFET´s, the limitation of Yamaguchi´s model in submicrometer device simulations is implied, while the quantum channel broadening effects have been proven significant in turn. This model can predict the current-voltage characteristics within 5- percent accuracy for scaled MOSFET´s down to 0.5 µm.
  • Keywords
    Acoustic scattering; Current-voltage characteristics; Design optimization; Electrons; Impurities; MOSFET circuits; Particle scattering; Poisson equations; Predictive models; Quantum mechanics;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1987.26613
  • Filename
    1487163
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1120643